Lithiation of silicon via lithium Zintl-defect complexes from first principles

Andrew J. Morris, R. J. Needs, Elodie Salager, C. P. Grey, and Chris J. Pickard
Phys. Rev. B 87, 174108 – Published 21 May 2013

Abstract

An extensive search for low-energy lithium defects in crystalline silicon using density-functional-theory methods and the ab initio random structure searching (AIRSS) method shows that the four-lithium-atom substitutional point defect is exceptionally stable. This defect consists of four lithium atoms with strong ionic bonds to the four under-coordinated atoms of a silicon vacancy defect, similar to the bonding of metal ions in Zintl phases. This complex is stable over a range of silicon environments, indicating that it may aid amorphization of crystalline silicon and form upon delithiation of the silicon anode of a Li-ion rechargeable battery.

  • Received 26 November 2012

DOI:https://doi.org/10.1103/PhysRevB.87.174108

©2013 American Physical Society

Authors & Affiliations

Andrew J. Morris1,*, R. J. Needs2, Elodie Salager3, C. P. Grey3, and Chris J. Pickard1

  • 1Department of Physics and Astronomy, University College London, Gower St, London WC1E 6BT, United Kingdom
  • 2Theory of Condensed Matter Group, Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 3Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, United Kingdom

  • *Present address: Cambridge University Nanoscience Centre, 11 J. J. Thomson Avenue, Cambridge CB3 0FF, United Kingdom; ajm255@cam.ac.uk

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Issue

Vol. 87, Iss. 17 — 1 May 2013

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