Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

J. E. Rault, G. Agnus, T. Maroutian, V. Pillard, Ph. Lecoeur, G. Niu, B. Vilquin, M. G. Silly, A. Bendounan, F. Sirotti, and N. Barrett
Phys. Rev. B 87, 155146 – Published 26 April 2013

Abstract

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

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  • Received 11 October 2012

DOI:https://doi.org/10.1103/PhysRevB.87.155146

©2013 American Physical Society

Authors & Affiliations

J. E. Rault1, G. Agnus2, T. Maroutian2, V. Pillard2, Ph. Lecoeur2, G. Niu3,*, B. Vilquin3, M. G. Silly4, A. Bendounan4, F. Sirotti4, and N. Barrett1,†

  • 1CEA, DSM/IRAMIS/SPCSI, F-91191 Gif-sur-Yvette Cedex, France
  • 2Institut d'Electronique Fondamentale, Université Paris-Sud, Bâtiment 220, 91405 Orsay, France
  • 3Université de Lyon, Ecole Centrale de Lyon, Institut des Nanotechnologies de Lyon, F-69134 Ecully cedex, France
  • 4Synchrotron-SOLEIL, BP 48, Saint-Aubin, F91192 Gif sur Yvette CEDEX, France

  • *Now at IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany.
  • nick.barrett@cea.fr

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Issue

Vol. 87, Iss. 15 — 15 April 2013

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