Giant generic topological Hall resistivity of MnSi under pressure

R. Ritz, M. Halder, C. Franz, A. Bauer, M. Wagner, R. Bamler, A. Rosch, and C. Pfleiderer
Phys. Rev. B 87, 134424 – Published 29 April 2013

Abstract

We report detailed low-temperature magnetotransport and magnetization measurements in MnSi under pressures up to 12kbar. Tracking the role of sample quality, pressure transmitter, and field and temperature history allows us to link the emergence of a giant topological Hall resistivity 50nΩcm to the skyrmion lattice phase at ambient pressure. We show that the remarkably large size of the topological Hall resistivity in the zero-temperature limit must be generic. We discuss various mechanisms which can lead to the much smaller signal at elevated temperatures observed at ambient pressure.

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  • Received 13 November 2012

DOI:https://doi.org/10.1103/PhysRevB.87.134424

©2013 American Physical Society

Authors & Affiliations

R. Ritz1, M. Halder1, C. Franz1, A. Bauer1, M. Wagner1, R. Bamler2, A. Rosch2, and C. Pfleiderer1

  • 1Technische Universität München, Physik-Department E21, D-85748 Garching, Germany
  • 2Institute of Theoretical Physics, Universität zu Köln, D-50937 Köln, Germany

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Vol. 87, Iss. 13 — 1 April 2013

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