Abstract
Motivated by recent experimental observations of Tongay et al. [Nano Lett. 12, 5576 (2012)] we show how the electronic properties and Raman characteristics of single layer MoSe are affected by elastic biaxial strain. We found that with increasing strain: (1) the and Raman peaks ( and in bulk) exhibit significant redshifts (up to 30 cm), (2) the position of the peak remains at 180 cm ( in bulk) and does not change considerably with further strain, (3) the dispersion of low energy flexural phonons crosses over from quadratic to linear, and (4) the electronic band structure undergoes a direct to indirect band gap crossover under 3 biaxial tensile strain. Thus the application of strain appears to be a promising approach for a rapid and reversible tuning of the electronic, vibrational, and optical properties of single layer MoSe and similar MX dichalcogenides.
- Received 16 December 2012
DOI:https://doi.org/10.1103/PhysRevB.87.125415
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