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High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As

M. Wang, K. W. Edmonds, B. L. Gallagher, A. W. Rushforth, O. Makarovsky, A. Patanè, R. P. Campion, C. T. Foxon, V. Novak, and T. Jungwirth
Phys. Rev. B 87, 121301(R) – Published 11 March 2013

Abstract

We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band.

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  • Received 12 February 2013

DOI:https://doi.org/10.1103/PhysRevB.87.121301

©2013 American Physical Society

Authors & Affiliations

M. Wang1, K. W. Edmonds1, B. L. Gallagher1, A. W. Rushforth1, O. Makarovsky1, A. Patanè1, R. P. Campion1, C. T. Foxon1, V. Novak2, and T. Jungwirth2,1

  • 1School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
  • 2Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 16253 Praha 6, Czech Republic

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Vol. 87, Iss. 12 — 15 March 2013

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