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Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC

Bastian Birkner, Daniel Pachniowski, Andreas Sandner, Markus Ostler, Thomas Seyller, Jaroslav Fabian, Mariusz Ciorga, Dieter Weiss, and Jonathan Eroms
Phys. Rev. B 87, 081405(R) – Published 14 February 2013
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Abstract

We present results of nonlocal and three-terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 C for 15 minutes in vacuum. The values of spin relaxation length Ls and spin relaxation time τs obtained after annealing are reduced by a factor 2 and 4, respectively, compared to those before annealing. An apparent discrepancy between spin diffusion constant Ds and charge diffusion constant Dc can be resolved by investigating the temperature dependence of the g factor, which is consistent with a model for paramagnetic magnetic moments.

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  • Received 11 October 2012

DOI:https://doi.org/10.1103/PhysRevB.87.081405

©2013 American Physical Society

Authors & Affiliations

Bastian Birkner1,*, Daniel Pachniowski1, Andreas Sandner1, Markus Ostler2, Thomas Seyller2,†, Jaroslav Fabian3, Mariusz Ciorga1, Dieter Weiss1, and Jonathan Eroms1

  • 1Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany
  • 2Lehrstuhl für Technische Physik, University of Erlangen-Nürnberg, 91058 Erlangen, Germany
  • 3Institute of Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany

  • *bastian.birkner@physik.uni-regensburg.de
  • Present address: Technische Universität Chemnitz, 09107 Chemnitz, Germany.

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Issue

Vol. 87, Iss. 8 — 15 February 2013

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