Abstract
We present results of nonlocal and three-terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 C for 15 minutes in vacuum. The values of spin relaxation length and spin relaxation time obtained after annealing are reduced by a factor 2 and 4, respectively, compared to those before annealing. An apparent discrepancy between spin diffusion constant and charge diffusion constant can be resolved by investigating the temperature dependence of the factor, which is consistent with a model for paramagnetic magnetic moments.
- Received 11 October 2012
DOI:https://doi.org/10.1103/PhysRevB.87.081405
©2013 American Physical Society