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Atomic surface structure of graphene and its buffer layer on SiC(0001): A chemical-specific photoelectron diffraction approach

L. H. de Lima, A. de Siervo, R. Landers, G. A. Viana, A. M. B. Goncalves, R. G. Lacerda, and P. Häberle
Phys. Rev. B 87, 081403(R) – Published 7 February 2013
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Abstract

We report a chemically specific x-ray photoelectron diffraction (XPD) investigation using synchrotron radiation of the thermally induced growth of epitaxial graphene on the 6H-SiC(0001). The XPD results show that the buffer layer on the SiC(0001) surface is formed by two domain regions rotated by 60 with respect to each other. The experimental data supported by a comprehensive multiple scattering calculation approach indicates the existence of a long-range ripple due the (63×63)R30 reconstruction, in addition to a local range buckling in the (0001) direction of the two sublattices that form the honeycomb structure of the buffer layer. This displacement supports the existence of an sp2-to-sp3 rehybridization in this layer. For the subsequent graphene layer this displacement is absent, which can explain several differences between the electronic structures of graphene and the buffer layer.

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  • Received 27 June 2012

DOI:https://doi.org/10.1103/PhysRevB.87.081403

©2013 American Physical Society

Authors & Affiliations

L. H. de Lima, A. de Siervo*, R. Landers, and G. A. Viana

  • Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, Campinas 13083-859, São Paulo, Brazil

A. M. B. Goncalves and R. G. Lacerda

  • Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Brazil

P. Häberle

  • Universidad Técnica Federico Santa María, Valparaíso, Chile

  • *Also as Joined Appointed Research of Laboratório Nacional de Luz Síncrotron - LNLS, 13083-970 Campinas, São Paulo, Brazil; E-mail: asiervo@ifi.unicamp.br

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Issue

Vol. 87, Iss. 8 — 15 February 2013

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