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Shubnikov–de Haas oscillations in the bulk Rashba semiconductor BiTeI

C. Bell, M. S. Bahramy, H. Murakawa, J. G. Checkelsky, R. Arita, Y. Kaneko, Y. Onose, M. Tokunaga, Y. Kohama, N. Nagaosa, Y. Tokura, and H. Y. Hwang
Phys. Rev. B 87, 081109(R) – Published 28 February 2013
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Abstract

Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces.

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  • Received 3 January 2012

DOI:https://doi.org/10.1103/PhysRevB.87.081109

©2013 American Physical Society

Authors & Affiliations

C. Bell1, M. S. Bahramy2, H. Murakawa2, J. G. Checkelsky2, R. Arita2,3, Y. Kaneko4, Y. Onose3,4, M. Tokunaga5, Y. Kohama5, N. Nagaosa2,3, Y. Tokura2,3,4, and H. Y. Hwang1,2,6

  • 1Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
  • 2Correlated Electron Research Group (CERG), RIKEN-ASI, Wako 351-0918, Japan
  • 3Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
  • 4Multiferroics Project, ERATO, JST, Tokyo 113-8656, Japan
  • 5International MegaGauss Science Laboratory, Institute for Solid State Physics, The University of Tokyo, Kashiwa 277-8581, Japan
  • 6Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA

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Issue

Vol. 87, Iss. 8 — 15 February 2013

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