Signature of the two-dimensional phonon dispersion in graphene probed by double-resonant Raman scattering

Patrick May, Michele Lazzeri, Pedro Venezuela, Felix Herziger, Gordon Callsen, Juan S. Reparaz, Axel Hoffmann, Francesco Mauri, and Janina Maultzsch
Phys. Rev. B 87, 075402 – Published 4 February 2013

Abstract

The contributions of the two-dimensional phonon dispersion to the double-resonant Raman scattering process in graphene is determined from the line shape of the two-phonon combination mode around 2450cm1. This mode is usually referred to as G* or D+D. By combining Raman experiments with excitation energies up to 2.8 eV and a full two-dimensional calculation of the double-resonant Raman process based on fourth-order perturbation, we can describe in detail the composition of this two-phonon mode and explain the asymmetry on the high-frequency side. The asymmetry directly reflects phonon contributions with wave vectors away from the high-symmetry lines in the Brillouin zone. The main peak of this mode originates from the KΓ high-symmetry line highlighting and supporting two important findings: first, the existence of so-called inner processes and, second, the dominant contribution along the high-symmetry line.

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  • Received 20 September 2012

DOI:https://doi.org/10.1103/PhysRevB.87.075402

©2013 American Physical Society

Authors & Affiliations

Patrick May1,*, Michele Lazzeri2, Pedro Venezuela3, Felix Herziger1, Gordon Callsen1, Juan S. Reparaz1,†, Axel Hoffmann1, Francesco Mauri2, and Janina Maultzsch1

  • 1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin, Germany
  • 2IMPMC, Université Pierre et Marie Curie, CNRS, 4 place Jussieu, F-75252 Paris, France
  • 3Instituto de Física da Universidade Federal Fluminense, Campus da Praia Vermelha, Niterói, RJ, Brazil

  • *pmay@physik.tu-berlin.de
  • Present address: Institut de Ciència de Materials de Barcelona-CSIC, Esfera UAB, 08193 Bellaterra, Spain.

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Vol. 87, Iss. 7 — 15 February 2013

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