Long spin relaxation time of holes in InGaAs/GaAs quantum wells probed by cyclotron resonance spectroscopy

O. Drachenko, D. Kozlov, A. V. Ikonnikov, K. E. Spirin, V. Gavrilenko, H. Schneider, M. Helm, and J. Wosnitza
Phys. Rev. B 87, 075315 – Published 15 February 2013

Abstract

In this paper, we report on a long, ms range, hole spin relaxation time in InGaAs/GaAs quantum wells probed by cyclotron resonance spectroscopy in pulsed magnetic fields. In our experiments, we found strong hysteresis in the spectral weights of cyclotron resonance absorption lines when rapidly changing magnetic field is used for the experiment. The hysteresis vanishes when a much slower changing magnetic field is used. We attribute this behavior to a long energy relaxation time between the two lowest spin-split hole Landau levels, i.e., a long hole spin relaxation time. We also present transition frequencies calculated using a 4×4 Luttinger Hamiltonian, which confirm our findings.

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  • Received 15 October 2012

DOI:https://doi.org/10.1103/PhysRevB.87.075315

©2013 American Physical Society

Authors & Affiliations

O. Drachenko1,*, D. Kozlov2,3,†, A. V. Ikonnikov2, K. E. Spirin2, V. Gavrilenko2,3, H. Schneider1, M. Helm1,4, and J. Wosnitza4,5

  • 1Institute of Ion-Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden, Germany
  • 2Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod, Russia
  • 3Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia
  • 4TU Dresden, D-01314 Dresden, Germany
  • 5Dresden High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden, Germany

  • *o.drachenko@hzdr.de
  • dvkoz@ipm.sci-nnov.ru

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Issue

Vol. 87, Iss. 7 — 15 February 2013

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