Electronic correlation strength of Pu

A. Svane, R. C. Albers, N. E. Christensen, M. van Schilfgaarde, A. N. Chantis, and Jian-Xin Zhu
Phys. Rev. B 87, 045109 – Published 10 January 2013

Abstract

An electronic quantity, the correlation strength, is defined as a necessary step for understanding the properties and trends in strongly correlated electronic materials. As a test case, this is applied to the different phases of elemental Pu. Within the GW approximation we have surprisingly found a “universal” scaling relationship, where the f-electron bandwidth reduction due to correlation effects is shown to depend only on the local density approximation bandwidth and is otherwise independent of crystal structure and lattice constant.

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  • Received 22 December 2011

DOI:https://doi.org/10.1103/PhysRevB.87.045109

©2013 American Physical Society

Authors & Affiliations

A. Svane1,*, R. C. Albers2, N. E. Christensen1, M. van Schilfgaarde3, A. N. Chantis4, and Jian-Xin Zhu2

  • 1Department of Physics and Astronomy, Aarhus University, DK 8000 Aarhus C, Denmark
  • 2Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  • 3Department of Physics, King's College London, The Strand, London WC2R 2LS, UK
  • 4American Physical Society, 1 Research Road, Ridge, New York 11961, USA

  • *svane@phys.au.dk

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Vol. 87, Iss. 4 — 15 January 2013

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