Abstract
The temperature dependence of the complex optical properties of the three-dimensional topological insulator BiTeSe is reported for light polarized in the a-b planes at ambient pressure, as well as the effects of pressure at room temperature. This material displays a semiconducting character with a bulk optical gap of meV at 295 K. In addition to the two expected infrared-active vibrations observed in the planes, there is an additional fine structure that is attributed to either the removal of degeneracy or the activation of Raman modes due to disorder. A strong impurity band located at cm is also observed. At and just above the optical gap, several interband absorptions are found to show a strong temperature and pressure dependence. As the temperature is lowered these features increase in strength and harden. The application of pressure leads to a very abrupt closing of the gap above 8 GPa, and strongly modifies the interband absorptions in the midinfrared spectral range. While ab initio calculations fail to predict the collapse of the gap, they do successfully describe the size of the band gap at ambient pressure, and the magnitude and shape of the optical conductivity.
- Received 24 September 2012
DOI:https://doi.org/10.1103/PhysRevB.86.235207
©2012 American Physical Society