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Defect stability in phase-field crystal models: Stacking faults and partial dislocations

Joel Berry, Nikolas Provatas, Jörg Rottler, and Chad W. Sinclair
Phys. Rev. B 86, 224112 – Published 27 December 2012

Abstract

The primary factors controlling defect stability in phase-field crystal (PFC) models are examined, with illustrative examples involving several existing variations of the model. Guidelines are presented for constructing models with stable defect structures that maintain high numerical efficiency. The general framework combines both long-range elastic fields and basic features of atomic-level core structures, with defect dynamics operable over diffusive time scales. Fundamental elements of the resulting defect physics are characterized for the case of fcc crystals. Stacking faults and split Shockley partial dislocations are stabilized for the first time within the PFC formalism, and various properties of associated defect structures are characterized. These include the dissociation width of perfect edge and screw dislocations, the effect of applied stresses on dissociation, Peierls strains for glide, and dynamic contraction of gliding pairs of partials. Our results in general are shown to compare favorably with continuum elastic theories and experimental findings.

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  • Received 26 September 2012

DOI:https://doi.org/10.1103/PhysRevB.86.224112

©2012 American Physical Society

Authors & Affiliations

Joel Berry1,3, Nikolas Provatas1,2, Jörg Rottler3, and Chad W. Sinclair4

  • 1Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L7
  • 2Physics Department, McGill University, 3600 rue University, Montréal, Québec, Canada H3A 2T8
  • 3Department of Physics and Astronomy, University of British Columbia, 6224 Agricultural Road, Vancouver, British Columbia, Canada V6T 1Z1
  • 4Department of Materials Engineering, University of British Columbia, 309-6350 Stores Road, Vancouver, British Columbia, Canada V6T 1Z4

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Issue

Vol. 86, Iss. 22 — 1 December 2012

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