Magnetospectroscopy of two-dimensional HgTe-based topological insulators around the critical thickness

M. Zholudev, F. Teppe, M. Orlita, C. Consejo, J. Torres, N. Dyakonova, M. Czapkiewicz, J. Wróbel, G. Grabecki, N. Mikhailov, S. Dvoretskii, A. Ikonnikov, K. Spirin, V. Aleshkin, V. Gavrilenko, and W. Knap
Phys. Rev. B 86, 205420 – Published 16 November 2012

Abstract

Recently, a new class of materials, so-called topological insulators, has emerged. These are systems characterized by the inversion of the electronic band structure and also by a certain strength of the spin-orbit interaction. HgTe/CdxHg1xTe quantum wells represent a prominent example. They can change to the topological insulator phase from the conventional insulator phase when the thickness of the quantum well is increased over the critical thickness dc = 6.3 nm. Here, we report on a far-infrared magnetospectroscopy study of a set of HgTe/CdxHg1xTe quantum wells with different thicknesses from below to above the critical value dc. In quantizing magnetic fields up to 16 T, both intraband and interband transitions have been clearly observed. In the widest quantum well with inverted band structure, we confirm the avoided crossing of the zero-mode Landau levels observed earlier in similar structures. In both noninverted quantum wells close to the critical thickness, we report unambiguously on the square root dependence of the transition energy on the magnetic field, as expected in the single-particle model of massless Dirac fermions. The obtained results are compared with the allowed transition energies between Landau levels in the valence and conduction bands calculated using the 8 × 8 Kane model.

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  • Received 20 June 2012

DOI:https://doi.org/10.1103/PhysRevB.86.205420

©2012 American Physical Society

Authors & Affiliations

M. Zholudev1,2, F. Teppe1,*, M. Orlita3, C. Consejo1, J. Torres4, N. Dyakonova1, M. Czapkiewicz5, J. Wróbel5, G. Grabecki5, N. Mikhailov6, S. Dvoretskii6, A. Ikonnikov2, K. Spirin2, V. Aleshkin2, V. Gavrilenko2, and W. Knap1

  • 1Laboratoire Charles Coulomb (L2C), UMR CNRS 5221, GIS-TERALAB, Universite Montpellier II, 34095 Montpellier, France
  • 2Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
  • 3Laboratoire National des Champs Magnetiques Intenses, CNRS-UJF-UPS-INSA, 25, avenue des Martyrs, FR-38042 Grenoble, France
  • 4Institut d'Électronique du Sud, UMR 5214 CNRS, Université Montpellier 2, 34095 Montpellier, France
  • 5Polish Academy of Sciences, Institute of Physics, aleja Lotników 32/46, Warszawa 02-668, Poland
  • 6A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia

  • *Corresponding author: frederic.teppe@univ-montp2.fr

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Issue

Vol. 86, Iss. 20 — 15 November 2012

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