Spin injection at remanence into III-V spin light-emitting diodes using (Co/Pt) ferromagnetic injectors

J. Zarpellon, H. Jaffrès, J. Frougier, C. Deranlot, J. M. George, D. H. Mosca, A. Lemaître, F. Freimuth, Quang Ha Duong, P. Renucci, and X. Marie
Phys. Rev. B 86, 205314 – Published 19 November 2012

Abstract

We have studied the perpendicular magnetic anisotropy of Co/Pt multilayers and the electron spin injection efficiency by optical spectroscopy from a [Co(0.6 nm)/Pt(1 nm)]4/Fe(0.3 nm)/MgO perpendicular tunnel spin injector grown on AlGaAs/GaAs semiconductor light-emitting diodes. We observe a 2.5% circular polarization at low temperature close to the magnetic remanence when the 0.3 nm Fe film of the ferromagnetic injector is sufficiently thin to maintain the magnetization out of plane. The acquired squared magnetization cycle is explained by the remaining interlayer exchange coupling existing between Fe and the (Co/Pt) multilayer through Pt or possible perpendicular magnetic anisotropy at the MgO/Fe interface. The corresponding spin polarization of the current is then estimated as 7%, measured by photoluminescence techniques, after the necessary up-renormalization, taking into account the electron spin-flip rate in the quantum well. In contrast, no circular polarization is observed when the thin Fe layer is removed and despite the rather high magnetic polarizability of the 5d9 electronic open shell of Pt at the interface with MgO. This emphasizes the reduced size of tunneling branching of wave functions at the interface, of the order of the atomic plane unit.

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  • Received 9 August 2012

DOI:https://doi.org/10.1103/PhysRevB.86.205314

©2012 American Physical Society

Authors & Affiliations

J. Zarpellon1,2, H. Jaffrès1,*, J. Frougier1, C. Deranlot1, J. M. George1, D. H. Mosca2, A. Lemaître3, F. Freimuth4, Quang Ha Duong5, P. Renucci5, and X. Marie5

  • 1Unité Mixte de Physique CNRS–Thales and Université Paris-Sud, Campus de Polytechnique, 1, Avenue Augustin Fresnel, 91767, Palaiseau, Cedex France
  • 2Laboratório de Nanoestruturas para Sensores, Universidade Federal do Paraná, Centro Politécnico, Caixa Postal 19091, 81531-990 Curitiba, Brazil
  • 3Laboratoire de Photonique et de Nanostructures, route de Nozay, 91460 Marcoussis, France
  • 4Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
  • 5Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077 Toulouse, France

  • *Present address: Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany.

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Issue

Vol. 86, Iss. 20 — 15 November 2012

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