Abstract
The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAsN was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23 N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23 N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32 N.
- Received 23 August 2012
DOI:https://doi.org/10.1103/PhysRevB.86.205203
©2012 American Physical Society