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High-field magnetoresistance revealing scattering mechanisms in graphene

Andreas Uppstu and Ari Harju
Phys. Rev. B 86, 201409(R) – Published 30 November 2012

Abstract

We show that the type of charge carrier scattering significantly affects the high-field magnetoresistance of graphene nanoribbons. This effect has the potential to be used in identifying the scattering mechanisms in graphene. The results also provide an explanation for the experimentally found, intriguing differences in the behavior of the magnetoresistance of graphene Hall bars placed on different substrates. Additionally, our simulations indicate that the peaks in the longitudinal resistance tend to become pinned to fractionally quantized values, as different transport modes have very different scattering properties.

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  • Received 8 April 2012

DOI:https://doi.org/10.1103/PhysRevB.86.201409

©2012 American Physical Society

Authors & Affiliations

Andreas Uppstu* and Ari Harju

  • COMP Centre of Excellence and Helsinki Institute of Physics, Department of Applied Physics, Aalto University School of Science, Helsinki, Finland

  • *christer.uppstu@aalto.fi

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Issue

Vol. 86, Iss. 20 — 15 November 2012

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