Erratum: Theory of interfacial plasmon-phonon scattering in supported graphene [Phys. Rev. B 86, 165422 (2012)]

Figure 1

The remote-phonon-limited mobility for SiO${}_2$, HfO${}_2$, h-BN, and Al${}_2$O${}_3$ is computed using (a) the old approximation in Eq. (1) and (b) the new approximation in Eq. (3). The new approximation yields a mobility that plateaus at high $n$ in SiO${}_2$, h-BN, and Al${}_2$O${}_3$.

Figure 2

Temperature dependence of the inverse mobility $1/{\mu }_{RP}$ in the old and new approximation for (a) $n={10}^{12}$ cm${}^{-2}$ and (b) $n=5\times {10}^{12}$ cm${}^{-2}$. The results from the old and new approximations are plotted with solid and hollow symbols, respectively.

Figure 3

The remote-phonon-limited mobility computed with different screening models: no screening (triangles), the old approximation (squares), the new approximation (circles), and the FG approximation (diamonds), for (a) Al${}_2$O${}_3$ and (b) SiO${}_2$.