Defects and localization in chemically-derived graphene

L. Ćirić, A. Sienkiewicz, R. Gaál, J. Jaćimović, C. Vâju, A. Magrez, and L. Forró
Phys. Rev. B 86, 195139 – Published 27 November 2012

Abstract

We have performed electron spin resonance (ESR) measurements on a large assembly of graphene oxide (GO) and reduced graphene oxide (RGO) flakes. In GO samples the Curie tail is coming from 1.4×1018 cm3 of localized spins. Although reduction of GO was expected to reestablish the pristine properties of graphene, no Pauli-like contribution was detected and only a low concentration of 1.2×1016 cm3 spin carrying defects were measured. Our study, completed by resistivity measurements, shows that the carrier transport in RGO samples is dominated by hopping. The incomplete reduction of GO leaves behind a large number of defects, presumably the majority of which are ESR silent, causing the Anderson localization of the electronic states. Slight doping with potassium indicates the appearance of a Pauli contribution in the spin susceptibility.

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  • Received 15 July 2012

DOI:https://doi.org/10.1103/PhysRevB.86.195139

©2012 American Physical Society

Authors & Affiliations

L. Ćirić, A. Sienkiewicz, R. Gaál, J. Jaćimović, C. Vâju, A. Magrez, and L. Forró

  • Ecole Polytechnique Fédérale de Lausanne, Laboratory of Physics of Complex Matter, CH-1015 Lausanne, Switzerland

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Issue

Vol. 86, Iss. 19 — 15 November 2012

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