Angular dependence of the Hall effect of La0.8Sr0.2MnO3 films

Netanel Naftalis, Noam Haham, Jason Hoffman, Matthew S. J. Marshall, C. H. Ahn, and Lior Klein
Phys. Rev. B 86, 184402 – Published 5 November 2012

Abstract

We find that the Hall effect resistivity (ρxy) of thin films of La0.8Sr0.2MnO3 varies as a function of the angle θ between the applied magnetic field and the film normal as ρxy=acosθ+bcos3θ, where |b| increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully explain the surprising term b, suggesting it is a manifestation of an intrinsic transport property.

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  • Received 6 September 2012

DOI:https://doi.org/10.1103/PhysRevB.86.184402

©2012 American Physical Society

Authors & Affiliations

Netanel Naftalis1,*, Noam Haham1,†, Jason Hoffman2, Matthew S. J. Marshall2, C. H. Ahn2, and Lior Klein1

  • 1Department of Physics, Nanomagnetism Research Center, Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel
  • 2Department of Applied Physics, Yale University, New Haven, Connecticut 06520-8284, USA

  • *naftaln@mail.biu.ac.il; Equal contribution.
  • Equal contribution.

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Vol. 86, Iss. 18 — 1 November 2012

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