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Stress-driven island growth on top of nanowires

Frank Glas and Bruno Daudin
Phys. Rev. B 86, 174112 – Published 16 November 2012

Abstract

We model the coherent deposition of a mismatched material on the top facet of a nanowire and investigate the possible formation of a cylindrical island that is narrower than the nanowire stem. We calculate the elastic relaxation and the total energy of the system and determine the optimal shape of the deposit as a function of misfit, nanowire radius, and deposit thickness. If the values of any two of these parameters are set, then there is a critical value of the third one above which the formation of a genuine island that is narrower than the stem is favored compared to that of a disk of equal volume covering entirely the top facet. These critical values are easily accessible in current nanowire systems, and we predict that islanding can lead to a large reduction of the total energy. We discuss the similarities and differences between the present effect and the standard Volmer-Weber and Stranski-Krastanow growth modes. For semiconductor nanowires, islanding is likely to occur primarily in the case of catalyst-free growth. We argue that it might already have been observed in heterostructures of nanowires of group-III nitrides.

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  • Received 24 August 2012

DOI:https://doi.org/10.1103/PhysRevB.86.174112

©2012 American Physical Society

Authors & Affiliations

Frank Glas*

  • CNRS - Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France

Bruno Daudin

  • CEA-CNRS-UJF Group Nanophysique et Semiconducteurs, CEA, INAC, 17 rue des Martyrs, 38054 Grenoble, France

  • *frank.glas@lpn.cnrs.fr

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Issue

Vol. 86, Iss. 17 — 1 November 2012

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