Abstract
We model the coherent deposition of a mismatched material on the top facet of a nanowire and investigate the possible formation of a cylindrical island that is narrower than the nanowire stem. We calculate the elastic relaxation and the total energy of the system and determine the optimal shape of the deposit as a function of misfit, nanowire radius, and deposit thickness. If the values of any two of these parameters are set, then there is a critical value of the third one above which the formation of a genuine island that is narrower than the stem is favored compared to that of a disk of equal volume covering entirely the top facet. These critical values are easily accessible in current nanowire systems, and we predict that islanding can lead to a large reduction of the total energy. We discuss the similarities and differences between the present effect and the standard Volmer-Weber and Stranski-Krastanow growth modes. For semiconductor nanowires, islanding is likely to occur primarily in the case of catalyst-free growth. We argue that it might already have been observed in heterostructures of nanowires of group-III nitrides.
1 More- Received 24 August 2012
DOI:https://doi.org/10.1103/PhysRevB.86.174112
©2012 American Physical Society