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High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping

Søren Ulstrup, Marco Bianchi, Richard Hatch, Dandan Guan, Alessandro Baraldi, Dario Alfè, Liv Hornekær, and Philip Hofmann
Phys. Rev. B 86, 161402(R) – Published 9 October 2012; Erratum Phys. Rev. B 93, 239901 (2016)

Abstract

The temperature-dependent electronic structure and electron-phonon coupling of weakly doped supported graphene is studied by angle-resolved photoemission spectroscopy and ab initio molecular dynamics simulations. The electron-phonon coupling is found to be extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier density and type in graphene. These changes in the electronic structure are mainly caused by fluctuations in the graphene-substrate distance.

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  • Received 19 March 2012

DOI:https://doi.org/10.1103/PhysRevB.86.161402

©2012 American Physical Society

Erratum

Erratum: High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping [Phys. Rev. B 86, 161402(R) (2012)]

Søren Ulstrup, Marco Bianchi, Richard Hatch, Dandan Guan, Alessandro Baraldi, Dario Alfè, Liv Hornekær, and Philip Hofmann
Phys. Rev. B 93, 239901 (2016)

Authors & Affiliations

Søren Ulstrup1, Marco Bianchi1, Richard Hatch1, Dandan Guan1, Alessandro Baraldi2,3, Dario Alfè4, Liv Hornekær1, and Philip Hofmann1

  • 1Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark
  • 2Physics Department and CENMAT, University of Trieste, 34127 Trieste, Italy
  • 3IOM-CNR Laboratorio TASC, Area Science Park, 34149 Trieste, Italy
  • 4Department of Earth Sciences, Department of Physics and Astronomy, TYC@UCL, and London Centre for Nanotechnology, University College London, Gower Street, London WC1E 6BT, United Kingdom

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Issue

Vol. 86, Iss. 16 — 15 October 2012

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