Atomistic theoretical study of electronic and polarization properties of single and vertically stacked elliptical InAs quantum dots

Muhammad Usman
Phys. Rev. B 86, 155444 – Published 22 October 2012

Abstract

The demonstration of isotropic polarization response from semiconductor quantum dots (QDs) is a crucial step towards the design of several optoelectronic technologies. Among many parameters that impact the degree of polarization (DOP[n]) of a QD system, the shape asymmetry is a critical factor. We perform multi-million-atom simulations to study the impact of the elliptical shapes on the electronic and polarization properties of single and vertically stacked InAs QDs. The comparison between a low aspect ratio (AR) and a high AR QD reveals that the electronic and the polarization properties strongly depend on the AR of the QD; the elongation of a tall QD allows tuning of the DOP[n] over a much wider range. We then extend our analysis to an experimentally reported vertical stack of nine QDs (9-VSQDs) that has shown significant potential to achieve isotropic polarization properties. We analyze the contribution from the shape asymmetry in the large, experimentally measured, in-plane polarization anisotropy. Our analysis shows that the orientation of the base elongation controls the sign of the DOP[n]; however, the magnitude of the base elongation has only a very little impact on the magnitude of the DOP[n]. We further predict that the elliptical shape of the 9-VSQDs can only tune either DOP[110] or DOP[1¯10] for the isotropic response. Our model results, in agreement with the TEM findings, suggest that the experimentally grown 9-VSQDs has either a circular or a slightly [1¯10] elongated base. Overall, the detailed investigation of DOP[n] as a function of the QD shape asymmetry provides a theoretical guidance for the continuing experimental efforts to achieve tailored polarization properties from QD nanostructures for the design of optical devices.

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  • Received 13 July 2012

DOI:https://doi.org/10.1103/PhysRevB.86.155444

©2012 American Physical Society

Authors & Affiliations

Muhammad Usman*

  • Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland

  • *usman@alumni.purdue.edu

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Vol. 86, Iss. 15 — 15 October 2012

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