Scaling of the paramagnetic anomalous Hall effect in SrRuO3

Noam Haham, James W. Reiner, and Lior Klein
Phys. Rev. B 86, 144414 – Published 22 October 2012

Abstract

We extract the paramagnetic anomalous Hall effect (AHE) resistivity ρxyAHE in thin films of the itinerant ferromagnet SrRuO3 and show that the AHE coefficient Rs scales with the longitudinal resistivity ρxx. We fit the resistivity dependence of ρxyAHE assuming two mechanisms: side jumps and Karplus-Luttinger (Berry phase) mechanism. For the latter, we consider the effect of a finite scattering time with a fractional power-law relation to ρxx.

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  • Received 2 September 2012

DOI:https://doi.org/10.1103/PhysRevB.86.144414

©2012 American Physical Society

Authors & Affiliations

Noam Haham1, James W. Reiner2, and Lior Klein1

  • 1Department of Physics, Nano-magnetism Research Center, Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel
  • 2HGST, a Western Digital company, 3403 Yerba Buena Road, San Jose, California 95315, USA

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Issue

Vol. 86, Iss. 14 — 1 October 2012

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