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Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond

L. M. Pham, N. Bar-Gill, D. Le Sage, C. Belthangady, A. Stacey, M. Markham, D. J. Twitchen, M. D. Lukin, and R. L. Walsworth
Phys. Rev. B 86, 121202(R) – Published 6 September 2012
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Abstract

We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical readout contrast for NV multispin measurements, including enhanced ac magnetic-field sensitivity, thus providing an important step towards high-fidelity multispin-qubit quantum information processing, sensing, and metrology.

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  • Received 5 July 2012

DOI:https://doi.org/10.1103/PhysRevB.86.121202

©2012 American Physical Society

Authors & Affiliations

L. M. Pham1, N. Bar-Gill2,3, D. Le Sage3, C. Belthangady3, A. Stacey4, M. Markham4, D. J. Twitchen4, M. D. Lukin2, and R. L. Walsworth2,3

  • 1School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
  • 2Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
  • 3Harvard-Smithsonian Center for Astrophysics, Cambridge, Massachusetts 02138, USA
  • 4Element Six, Ltd., King's Ride Park, Ascot, Berkshire SL5 8BP, England, United Kingdom

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Issue

Vol. 86, Iss. 12 — 15 September 2012

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