Theory of photoexcited carrier relaxation across the energy gap of phase-ordered materials

Shota Ono, Hiroyuki Shima, and Yasunori Toda
Phys. Rev. B 86, 104512 – Published 26 September 2012

Abstract

We develop a theory to describe the energy relaxation of photoexcited carriers in low-temperature ordered states with a band-gap opening. Carrier relaxation time τ near and below transition temperature Tc is formulated by examining the contributions from different carrier-phonon scatterings to the relaxation rate. Transverse acoustic phonon modes are found to play a crucial role in carrier relaxation; their heat capacity determines the τ divergence near Tc. Remarkable agreements with the theory and experimental data on two different materials which exhibit contrasting τ(T) behaviors are also demonstrated.

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  • Received 12 February 2012

DOI:https://doi.org/10.1103/PhysRevB.86.104512

©2012 American Physical Society

Authors & Affiliations

Shota Ono1,2,*, Hiroyuki Shima2,3, and Yasunori Toda2

  • 1Department of Physics, Graduate School of Engineering, Yokohama National University, Yokohama 240-8501, Japan
  • 2Division of Applied Physics, Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628, Japan
  • 3Department of Environmental Sciences and Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37, Takeda, Kofu, Yamanashi 400-8510, Japan

  • *shota-o@ynu.ac.jp

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Issue

Vol. 86, Iss. 10 — 1 September 2012

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