Abstract
We develop a theory to describe the energy relaxation of photoexcited carriers in low-temperature ordered states with a band-gap opening. Carrier relaxation time near and below transition temperature is formulated by examining the contributions from different carrier-phonon scatterings to the relaxation rate. Transverse acoustic phonon modes are found to play a crucial role in carrier relaxation; their heat capacity determines the divergence near . Remarkable agreements with the theory and experimental data on two different materials which exhibit contrasting behaviors are also demonstrated.
- Received 12 February 2012
DOI:https://doi.org/10.1103/PhysRevB.86.104512
©2012 American Physical Society