Band gap of wurtzite GaAs: A resonant Raman study

Patryk Kusch, Steffen Breuer, Manfred Ramsteiner, Lutz Geelhaar, Henning Riechert, and Stephanie Reich
Phys. Rev. B 86, 075317 – Published 24 August 2012

Abstract

We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of single wurtzite and zinc-blende GaAs nanowires. The optical band gap of wurtzite GaAs is 1.460eV±3meV at room temperature, and 35±3meV larger than the GaAs zinc-blende band gap. Raman measurements using incoming light polarized parallel and perpendicular to the wire c axis allowed us to investigate the splitting of heavy Γ9 and light-hole Γ7 band at the Γ point of 65±6meV.

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  • Received 5 June 2012

DOI:https://doi.org/10.1103/PhysRevB.86.075317

©2012 American Physical Society

Authors & Affiliations

Patryk Kusch1,*, Steffen Breuer2, Manfred Ramsteiner2, Lutz Geelhaar2, Henning Riechert2, and Stephanie Reich1

  • 1Institut für Experimantal Physik, Freie Universität, D-14195 Berlin, Germany
  • 2Paul Drude Institut für Festkor̈perelektronik, D-10117 Berlin, Germany

  • *patryk.kusch@fu-berlin.de

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Vol. 86, Iss. 7 — 15 August 2012

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