Local tunneling magnetoresistance control with surface-state confinement and external electric field

Pavel A. Ignatiev, Oleg O. Brovko, and Valeri S. Stepanyuk
Phys. Rev. B 86, 045409 – Published 6 July 2012

Abstract

On the basis of density functional calculations, the possibility of using spin-polarized confinement and band structure manipulation by means of external electric fields to tune the local spin polarization of electrons and the local magnetoresistance ratio of a tunneling junction is discussed. To illustrate the concept, a model system of a bilayer Co island supported on a Cu(111) surface is used.

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  • Received 9 March 2012

DOI:https://doi.org/10.1103/PhysRevB.86.045409

©2012 American Physical Society

Authors & Affiliations

Pavel A. Ignatiev, Oleg O. Brovko, and Valeri S. Stepanyuk

  • Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany

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Issue

Vol. 86, Iss. 4 — 15 July 2012

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