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Microscopic mechanisms for the Fermi-liquid behavior of Nb-doped strontium titanate

S. N. Klimin, J. Tempere, D. van der Marel, and J. T. Devreese
Phys. Rev. B 86, 045113 – Published 13 July 2012

Abstract

The relaxation rate in Nb-doped strontium titanate involving different scattering channels is investigated theoretically. It is demonstrated that the total relaxation rate in SrTi1xNbxO3 is provided mainly by two mechanisms. The Baber electron-electron scattering with participation of both Coulomb and phonon-mediated electron-electron interactions provides the T2 dependence of the relaxation rate. The scattering on the potential landscape caused by impurities is responsible for the residual relaxation rate at low temperatures. A good agreement with experiment is achieved accounting for all phonon branches in strontium titanate, both the optical and acoustic phonons. It is shown that the effective electron-electron interaction can be attractive in strontium titanate, and provides superconductivity at low temperatures and Fermi-liquid response in a wide range of temperatures. Thus our microscopic model supports the notion that superconductivity and Fermi-liquid properties of n-type SrTiO3 have a common origin.

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  • Received 4 June 2012

DOI:https://doi.org/10.1103/PhysRevB.86.045113

©2012 American Physical Society

Authors & Affiliations

S. N. Klimin* and J. Tempere

  • Theorie van Kwantumsystemen en Complexe Systemen (TQC), Universiteit Antwerpen, Universiteitsplein 1, B-2610 Antwerpen, Belgium

D. van der Marel

  • Département de Physique de la Matière Condensée, Université de Genève, CH-1211 Genève 4, Switzerland

J. T. Devreese

  • Theorie van Kwantumsystemen en Complexe Systemen (TQC), Universiteit Antwerpen, Universiteitsplein 1, B-2610 Antwerpen, Belgium

  • *On leave of absence from: Department of Theoretical Physics, State University of Moldova, str. A. Mateevici 60, MD-2009 Kishinev, Republic of Moldova.
  • Also at Lyman Laboratory of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.

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Issue

Vol. 86, Iss. 4 — 15 July 2012

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