Magnetic properties of single-crystalline CeCuGa3

Devang A. Joshi, P. Burger, P. Adelmann, D. Ernst, T. Wolf, K. Sparta, G. Roth, K. Grube, C. Meingast, and H. v. Löhneysen
Phys. Rev. B 86, 035144 – Published 25 July 2012

Abstract

The magnetic behavior of single-crystalline CeCuGa3 has been investigated. The compound forms in a tetragonal BaAl4-type structure consisting of rare-earth planes separated by site-disordered Cu-Ga layers. If the Cu-Ga site disorder is reduced, CeCuGa3 adopts the related, likewise tetragonal, BaNiSn3-type structure, in which the inversion symmetry is lost. We report on a detailed study of single crystals with the centrosymmetric structure variant which exhibit ferromagnetic order below 4 K with a strong, planar anisotropy. The magnetic behavior above the transition temperature can be well understood by the crystal-field splitting of the 4f Hund's rule ground-state multiplet 2F5/2 of Ce3+.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
2 More
  • Received 19 April 2012

DOI:https://doi.org/10.1103/PhysRevB.86.035144

©2012 American Physical Society

Authors & Affiliations

Devang A. Joshi1, P. Burger1, P. Adelmann1, D. Ernst1, T. Wolf1, K. Sparta2, G. Roth2, K. Grube1, C. Meingast1, and H. v. Löhneysen1,3

  • 1Institut für Festkörperphysik, Karlsruhe Institute of Technology, D-76021 Karlsruhe, Germany
  • 2Institute of Crystallography, Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen, Jägerstrasse 17/19, D-52056 Aachen, Germany
  • 3Physikalisches Institut, Karlsruhe Institute of Technology, D-76031 Karlsruhe, Germany

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 86, Iss. 3 — 15 July 2012

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×