Transition from Au to pseudo-Ga catalyzed growth mode observed in GaAs nanowires grown by molecular beam epitaxy

M. Soda, A. Rudolph, D. Schuh, J. Zweck, D. Bougeard, and E. Reiger
Phys. Rev. B 85, 245450 – Published 29 June 2012

Abstract

We investigate the correlation between the Ga concentration of the catalyst droplet and the adopted crystal structure of individual GaAs nanowires grown by molecular-beam epitaxy using Au as a catalyst material. Through a postgrowth analysis the Ga content of the catalyst droplet during growth is estimated and related to the observed crystal structure of the nanowires. Depending on the Ga concentration, we observe a transition from typical Au catalyzed to pseudo-Ga assisted nanowire growth: Nanowires with low Ga concentration of the catalyst droplet during growth form predominantly wurtzite crystal structures. For Ga concentrations higher than 75 at. %, which we refer to as the pseudo-Ga assisted growth mode, the probability to form zinc-blende segments is strongly enhanced owing to the reduced droplet surface energy of the catalyst.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 7 September 2011

DOI:https://doi.org/10.1103/PhysRevB.85.245450

©2012 American Physical Society

Authors & Affiliations

M. Soda, A. Rudolph, D. Schuh, J. Zweck, D. Bougeard, and E. Reiger

  • Institute for Experimental and Applied Physics, University of Regensburg, Universitätsstr. 31, D-93053 Regensburg, Germany

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 85, Iss. 24 — 15 June 2012

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×