Controlling competing interactions at oxide interfaces: Enhanced anisotropy in La0.7Sr0.3MnO3 films via interface engineering

J.-S. Lee, D. A. Arena, T. S. Santos, C. S. Nelson, S. I. Hyun, J. H. Shim, and C.-C. Kao
Phys. Rev. B 85, 235125 – Published 14 June 2012

Abstract

We investigated thin La0.7Sr0.3MnO3-SrTiO3 heterostructures, where the band alignment is engineered by a variation of La/Sr stoichiometry only at the interface. In thin films, the engineered interface leads to an enhancement of the reversed spin configuration that mimics bulk behavior. Microscopically, this enhancement is closely connected with an increased magnetic anisotropy as well as intercoupling between an eg orbital reconstruction and a corresponding anisotropic lattice fluctuation. Furthermore, a reentrant-type behavior, triggered by this intercoupling, is observed in the remanent spin state. This microscopic perspective leads to insights on developing new strategies for maintaining bulk-like properties even in very thin La0.7Sr0.3MnO3 heterostructures.

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  • Received 4 November 2011

DOI:https://doi.org/10.1103/PhysRevB.85.235125

©2012 American Physical Society

Authors & Affiliations

J.-S. Lee1,*, D. A. Arena2, T. S. Santos3,4, C. S. Nelson2, S. I. Hyun5, J. H. Shim5, and C.-C. Kao1

  • 1Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
  • 2National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973, USA
  • 3Western Digital Corporation, San Jose, California 95138, USA
  • 4Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA
  • 5Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784, S. Korea

  • *To whom correspondence should be addressed: jslee@slac.stanford.edu

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Issue

Vol. 85, Iss. 23 — 15 June 2012

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