Abstract
The details of a Sr-induced () reconstruction on Ge(100) were examined using scanning tunneling microscopy (STM) and density functional theory. At 1/6 ML of Sr, this reconstruction is similar to the 1/6 ML () Sr phase previously observed on Si. In contrast to Si, however, atomic-resolution images of the Sr-Ge phase exhibit more dramatic and unusual bias dependence in STM that could be explained with the help of first-principles calculations of minimum energy structures. Simulated STM images are in excellent agreement with the experimental data and allow the () Sr-Si double dimer vacancy alloy model to be extended to the Ge surface through a more complex () arrangement of its building blocks. The difference between Si and Ge is interpreted in terms of the lower Ge-Ge binding energy and differences in the interatomic bond lengths.
- Received 20 March 2012
DOI:https://doi.org/10.1103/PhysRevB.85.195316
©2012 American Physical Society