Monte Carlo study of magnetic resistivity in semiconducting MnTe

We investigate in this paper properties of the spin resistivity in magnetic semiconducting MnTe of the NiAs structure. MnTe is a crossroad semiconductor with a large band gap. It is an antiferromagnet with a Néel temperature around 310 K. Due to this high Néel temperature, there are many applications using its magnetic properties. The method we use here is Monte Carlo simulation, in which we take into account the interaction between itinerant spins and lattice Mn spins. Our results show a very good agreement with experiments on the shape of the spin resistivity near the Néel temperature.

Figure 1

Structure of MnTe of the NiAs type. Antiparallel spins are shown by black and white circles. The nearest-neighbor (NN) interaction is labeled $J_1$; the next NN interaction, $J_2$; and the third NN interaction, $J_3$.

Figure 2

Spin resistivity $\rho$ versus temperature $T$. Filled circles are from Monte Carlo simulation; open circles are experimental data taken from He et al.[31] Parameters used in the simulation are $J1=-21.5$ K, $J_2=2.55$ K, $J_3=-9$ K, $I_0=2$ K, $D=0.12$ K, $D_1=a=4.158$ Å, $E=2\times {10}^5$ V/m, and $L=30$.

Figure 3

Magnetization $M$ (in units of ${\mu }_B$) versus temperature $T$ (in units of K). Filled circles are the results of Monte Carlo simulation; open circles are experimental data taken from Efrem D'Sa et al.[30] Parameters are the same as those given in the caption to Fig. 2.