Structural and magnetic properties of MBE-grown GeMnN2 thin films

Y. Liu, V. K. Lazarov, S. H. Cheung, D. J. Keavney, Z. Gai, M. Gajdardziska-Josifovska, M. Weinert, and L. Li
Phys. Rev. B 85, 144113 – Published 23 April 2012

Abstract

Epitaxial GeMnN2 thin films are synthesized by plasma-assisted molecular beam epitaxy. Transmission electron microscopy and x-ray diffraction measurements confirm that it is the orthorhombic variant, consistent with the predictions of first-principles calculations. The magnetic properties of the films are related to defects, with samples grown under Ge-rich conditions exhibiting a net magnetic moment above room temperature. These results are explained by first-principles calculations, indicating that the preferential substitution of one magnetic sublattice of GeMnN2 by impurities and/or intrinsic defects such as Ge antisites produces a net magnetic moment in an antiferromagnetic background, and also introduces spin-polarized carriers near the Fermi level.

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  • Received 1 October 2011

DOI:https://doi.org/10.1103/PhysRevB.85.144113

©2012 American Physical Society

Authors & Affiliations

Y. Liu1, V. K. Lazarov1,2, S. H. Cheung1, D. J. Keavney3, Z. Gai4, M. Gajdardziska-Josifovska1, M. Weinert1, and L. Li1,*

  • 1Physics Department, University of Wisconsin, Milwaukee, Wisconsin 53211, USA
  • 2Department of Physics, University of York, York YO10 5DD, United Kingdom
  • 3Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 4Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

  • *lianli@uwm.edu

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Issue

Vol. 85, Iss. 14 — 1 April 2012

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