Effects of spin density wave quantization on the electrical transport in epitaxial Cr thin films

E. Osquiguil, E. E. Kaul, L. Tosi, and C. A. Balseiro
Phys. Rev. B 85, 104410 – Published 15 March 2012

Abstract

We present measurements of the electrical resistivity ρ in epitaxial Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature T. The ρ(T) curves display hysteretic behavior in a certain temperature range, which is film thickness dependent. The hysteresis are related to the confinement of quantized incommensurate spin density waves (ISDW) in the film thickness. Our important finding is to experimentally show that the temperature Tmid where the ISDW changes from N to N+1 nodes decreases as the film thickness increases. Identifying Tmid with a first-order transition between ISDW states with N and N+1 nodes, and using a Landau approach to the free energy of the ISDW together with Monte Carlo simulations, we show that the system at high temperatures explores all available modes for the ISDW, freezing out in one particular mode at a transition temperature that indeed decreases with film thickness L. The detailed dependence of Tmid(L) seems to depend rather strongly on the boundary conditions at the Cr film interfaces.

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  • Received 21 November 2011

DOI:https://doi.org/10.1103/PhysRevB.85.104410

©2012 American Physical Society

Authors & Affiliations

E. Osquiguil, E. E. Kaul, L. Tosi, and C. A. Balseiro

  • Centro Atómico Bariloche and Instituto Balseiro, Comisión Nacional de Energía Atómica, 8400 Bariloche, Argentina

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Issue

Vol. 85, Iss. 10 — 1 March 2012

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