Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells

M. Griesbeck, M. M. Glazov, E. Ya. Sherman, D. Schuh, W. Wegscheider, C. Schüller, and T. Korn
Phys. Rev. B 85, 085313 – Published 27 February 2012

Abstract

We have studied spin dephasing in a high-mobility two-dimensional electron system confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDTs) for electron spins aligned along the growth direction or within the sample plane, as well as the g factor. We observe a strong anisotropy in the spin dephasing times. While the in-plane SDT remains almost constant as the temperature is varied between 4 and 50 K, the out-of-plane SDT shows a dramatic increase at a temperature of about 25 K and reaches values of about 100 ns. The SDTs at 4 K can be further increased by additional, weak above-barrier illumination. The origin of this unexpected behavior is discussed. The SDT enhancement is attributed to the redistribution of charge carriers between the electron gas and remote donors.

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  • Received 19 December 2011

DOI:https://doi.org/10.1103/PhysRevB.85.085313

©2012 American Physical Society

Authors & Affiliations

M. Griesbeck1, M. M. Glazov2,*, E. Ya. Sherman3, D. Schuh1, W. Wegscheider4, C. Schüller1, and T. Korn1,†

  • 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany
  • 2Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
  • 3Department of Physical Chemistry, The University of the Basque Country UPV/EHU, 48080 Bilbao, Spain and IKERBASQUE Basque Foundation for Science, Alameda Urquijo 36-5, 48011 Bilbao, Bizkaia, Spain
  • 4Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland

  • *glazov@coherent.ioffe.ru
  • tobias.korn@physik.uni-regensburg.de

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Issue

Vol. 85, Iss. 8 — 15 February 2012

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