Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas

Srijit Goswami, M. A. Aamir, Christoph Siegert, Michael Pepper, Ian Farrer, David A. Ritchie, and Arindam Ghosh
Phys. Rev. B 85, 075427 – Published 23 February 2012; Erratum Phys. Rev. B 86, 119904 (2012)

Abstract

Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic, and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I(V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I(V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.

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  • Received 21 November 2011

DOI:https://doi.org/10.1103/PhysRevB.85.075427

©2012 American Physical Society

Erratum

Erratum: Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas [Phys. Rev. B 85, 075427 (2012)]

Srijit Goswami, M. A. Aamir, Christoph Siegert, Michael Pepper, Ian Farrer, David A. Ritchie, and Arindam Ghosh
Phys. Rev. B 86, 119904 (2012)

Authors & Affiliations

Srijit Goswami1,*, M. A. Aamir1, Christoph Siegert2, Michael Pepper3, Ian Farrer2, David A. Ritchie2, and Arindam Ghosh1

  • 1Department of Physics, Indian Institute of Science, Bangalore 560 012, India
  • 2Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 3Department of Electronic and Electrical Engineering, University College, London WC1E 7JE, United Kingdom

  • *goswami@physics.iisc.ernet.in

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Issue

Vol. 85, Iss. 7 — 15 February 2012

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