Single-valley quantum Hall ferromagnet in a dilute MgxZn1xO/ZnO strongly correlated two-dimensional electron system

Y. Kozuka, A. Tsukazaki, D. Maryenko, J. Falson, C. Bell, M. Kim, Y. Hikita, H. Y. Hwang, and M. Kawasaki
Phys. Rev. B 85, 075302 – Published 3 February 2012

Abstract

We investigate the spin susceptibility (g*m*) of dilute two-dimensional (2D) electrons confined at the MgxZn1xO/ZnO heterointerface. Magnetotransport measurements show a four-fold enhancement of g*m*, dominated by the increase in the Landé g-factor. The g-factor enhancement leads to a ferromagnetic instability of the electron gas as evidenced by sharp resistance spikes. At high magnetic field, the large g*m* leads to full spin polarization, where we found sudden increase in resistance around the filling factors of half-integer, accompanied by complete disappearance of fractional quantum Hall (QH) states. Along with its large effective mass and the high electron mobility, our result indicates that the ZnO 2D system is ideal for investigating the effect of electron correlations in the QH regime.

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  • Received 12 January 2012

DOI:https://doi.org/10.1103/PhysRevB.85.075302

©2012 American Physical Society

Authors & Affiliations

Y. Kozuka1,*, A. Tsukazaki1,2, D. Maryenko3, J. Falson1,†, C. Bell4,5, M. Kim4,5, Y. Hikita4,5, H. Y. Hwang3,4,5,6, and M. Kawasaki1,3,6,7

  • 1Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan
  • 2PRESTO, Japan Science and Technology Agency (JST), Tokyo 102-0075, Japan
  • 3Correlated Electron Research Group (CERG), RIKEN-Advanced Science Institute, Wako 351-0198, Japan
  • 4Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
  • 5Department of Applied Physics and Stanford Institute for Materials and Energy Sciences, Stanford University, Stanford, California 94305, USA
  • 6CREST, Japan Science and Technology Agency (JST), Tokyo 102-0075, Japan
  • 7WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

  • *kozuka@ap.t.u-tokyo.ac.jp
  • On leave from the Institute for Materials Research, Tohoku University.

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Issue

Vol. 85, Iss. 7 — 15 February 2012

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