High domain wall velocities in in-plane magnetized (Ga,Mn)(As,P) layers

L. Thevenard, S. A. Hussain, H. J. von Bardeleben, M. Bernard, A. Lemaître, and C. Gourdon
Phys. Rev. B 85, 064419 – Published 28 February 2012

Abstract

Field-induced domain wall (DW) propagation was evidenced in unpatterned layers of in-plane magnetized Ga1xMnxAs1yPy using Kerr microscopy. Both stationary and precessional regimes were observed, and domain wall velocities of up to 500 m s1 were measured, of the order of magnitude of those observed on in-plane magnetized metals. Taking advantage of the strain-dependent magnetocrystalline anisotropy in this dilute magnetic semiconductor, both out-of-plane and in-plane anisotropies were adjusted by varying the manganese and phosphorus concentrations. We demonstrate that these anisotropies are a critical parameter to obtain large velocities. These results are interpreted in the framework of the one-dimensional model for domain wall propagation.

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  • Received 22 December 2011

DOI:https://doi.org/10.1103/PhysRevB.85.064419

©2012 American Physical Society

Authors & Affiliations

L. Thevenard1,*, S. A. Hussain1, H. J. von Bardeleben1, M. Bernard1, A. Lemaître2, and C. Gourdon1

  • 1Institut des Nanosciences de Paris, Université Pierre et Marie Curie, CNRS, UMR7588, 4 place Jussieu, F-75252 Paris, France
  • 2Laboratoire de Photonique et Nanostructures, CNRS, UPR 20, Route de Nozay, Marcoussis, F-91460, France

  • *thevenard@insp.jussieu.fr

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Vol. 85, Iss. 6 — 1 February 2012

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