Biexciton binding energy in fractional dimensional semiconductors

Troels F. Rønnow, Thomas G. Pedersen, and Bart Partoens
Phys. Rev. B 85, 045412 – Published 6 January 2012

Abstract

Biexcitons in fractional dimensional spaces are studied using variational quantum Monte Carlo. We investigate the biexciton binding energy as a function of the electron-hole mass fraction σ as well as study the dimensional dependence of biexcitons for σ=0 and σ=1. As our first application of this model we treat the H2 molecule in two and three dimensions. Next we investigate biexcitons in carbon nanotubes within the fractional dimensional model. To this end we find a relation between the nanotube radius and the effective dimension. The results of both applications are compared with results obtained using different models and we find a reasonable agreement. Within the fractional dimensional model we find that the biexciton binding energy in carbon nanotubes accurately scales as EB(r,ɛ)=1280meVÅ/(rɛ), as a function of radius r and the dielectric screening ɛ.

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  • Received 23 August 2011

DOI:https://doi.org/10.1103/PhysRevB.85.045412

©2012 American Physical Society

Authors & Affiliations

Troels F. Rønnow1,2,*, Thomas G. Pedersen1, and Bart Partoens3,†

  • 1Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg Øst, Denmark
  • 2ETH Zürich, Institut fur Theoretische Physik, Wolfgang-Pauli-Strasse 27, CH-8093 Zürich, Switzerland
  • 3Universiteit Antwerpen, Departement Fysica, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium

  • *tfr@nanophysics.dk; http://www.nanophysics.dk
  • bart.partoens@ua.ac.be

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Issue

Vol. 85, Iss. 4 — 15 January 2012

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