Effects of unreconstructed and reconstructed polar surface terminations on growth, structure, and magnetic properties of hematite films

S. H. Cheung, A. Celik-Aktas, P. Dey, K. Pande, M. Weinert, B. Kabius, D. J. Keavney, V. K. Lazarov, S. A. Chambers, and M. Gajdardziska-Josifovska
Phys. Rev. B 85, 045405 – Published 5 January 2012

Abstract

The effects of polar surface stabilization mechanisms on the film growth, phase composition, surface and interface structure, and magnetic properties are explored for polar oxide interfaces formed by the epitaxial growth of hematite films on magnesia and alumina single crystals. Growth of α-Fe2O3(0001) on the (3×3)R30° and (2 × 2) reconstructed MgO(111) surfaces results in formation of a self-organized Fe3O4(111) interfacial nano buffer that persists after growth. The interfacial magnetite-like phase is absent from the hematite films formed on hydrogen-stabilized unreconstructed MgO(111)-(1 × 1) and on Al2O3(0001)-(1 × 1) surfaces under equivalent conditions. This study suggests that in addition to the customary strain, spin, and band-gap engineering, control of surface polarity stabilization could also be important for electronic and magnetic device engineering.

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  • Received 10 June 2008

DOI:https://doi.org/10.1103/PhysRevB.85.045405

©2012 American Physical Society

Authors & Affiliations

S. H. Cheung1,*, A. Celik-Aktas1,†, P. Dey1,‡, K. Pande1, M. Weinert1, B. Kabius2, D. J. Keavney3, V. K. Lazarov4,§, S. A. Chambers5, and M. Gajdardziska-Josifovska1,∥

  • 1Department of Physics and Laboratory for Surface Studies, University of Wisconsin-Milwaukee, P.O. Box 413, Milwaukee, Wisconsin 53201, USA
  • 2WR Wiley Environmental Molecular Sciences Laboratory, Interfacial and Nanoscale Science Facility, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352, USA
  • 3Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 4Department of Materials, Oxford University, Parks Road, Oxford OX1 3PH, United Kingdom
  • 5Chemical and Materials Science Division, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352, USA

  • *Current address: Micron Technology, 8000 S Federal Way, Boise, Idaho 83716-9632, USA.
  • Current address: Department of Engineering Physics, Faculty of Engineering, Ankara University, TR-06100 Besevler-Ankara, Turkey.
  • Current address: Department of Applied Physics, University of South Florida, Tampa, Florida 33620, USA.
  • §Current address: Department of Physics, University of York, Heslington, York, YO10 5DD, United Kingdom.
  • Corresponding author: mgj@uwm.edu

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Vol. 85, Iss. 4 — 15 January 2012

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