Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/(Al,In)Sb quantum well structures

S. Stachel, P. Olbrich, C. Zoth, U. Hagner, T. Stangl, C. Karl, P. Lutz, V. V. Bel'kov, S. K. Clowes, T. Ashley, A. M. Gilbertson, and S. D. Ganichev
Phys. Rev. B 85, 045305 – Published 9 January 2012

Abstract

We report on the observation of linear and circular magnetogyrotropic photogalvanic effects in InSb/(Al,In)Sb quantum well structures. We show that intraband (Drude-type) absorption of terahertz radiation in the heterostructures causes a dc electric current in the presence of an in-plane magnetic field. The photocurrent behavior upon variation of the magnetic field strength, temperature, and wavelength is studied. We show that at moderate magnetic fields, the photocurrent exhibits a typical linear field dependence. At high magnetic fields, however, it becomes nonlinear and inverses its sign. The experimental results are analyzed in terms of the microscopic models based on asymmetric relaxation of carriers in the momentum space. We demonstrate that the observed nonlinearity of the photocurrent is caused by the large Zeeman spin splitting in InSb/(Al,In)Sb structures and an interplay of the spin-related and spin-independent roots of the magnetogyrotropic photogalvanic effect.

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  • Received 7 December 2011

DOI:https://doi.org/10.1103/PhysRevB.85.045305

©2012 American Physical Society

Authors & Affiliations

S. Stachel1, P. Olbrich1, C. Zoth1, U. Hagner1, T. Stangl1, C. Karl1, P. Lutz1, V. V. Bel'kov2, S. K. Clowes3, T. Ashley4, A. M. Gilbertson5, and S. D. Ganichev1

  • 1Terahertz Center, University of Regensburg, DE-93040 Regensburg, Germany
  • 2Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
  • 3Advanced Technology Institute and SEPNet, University of Surrey, Surrey GU2 7XH, United Kingdom
  • 4School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom
  • 5Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom

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Issue

Vol. 85, Iss. 4 — 15 January 2012

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