Optical third harmonic generation in the magnetic semiconductor EuSe

M. Lafrentz, D. Brunne, B. Kaminski, V. V. Pavlov, R. V. Pisarev, A. B. Henriques, D. R. Yakovlev, G. Springholz, G. Bauer, and M. Bayer
Phys. Rev. B 85, 035206 – Published 17 January 2012

Abstract

Third harmonic generation (THG) has been studied in europium selenide EuSe in the vicinity of the band gap at 2.12.6 eV and at higher energies up to 3.7 eV. EuSe is a magnetic semiconductor crystalizing in centrosymmetric structure of rock-salt type with the point group m3m. For this symmetry the crystallographic and magnetic-field-induced THG nonlinearities are allowed in the electric-dipole approximation. Using temperature, magnetic field, and rotational anisotropy measurements, the crystallographic and magnetic-field-induced contributions to THG were unambiguously separated. Strong resonant magnetic-field-induced THG signals were measured at energies in the range of 2.12.6 eV and 3.13.6 eV for which we assign to transitions from 4f7 to 4f65d1 bands, namely involving 5d(t2g) and 5d(eg) states.

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  • Received 2 November 2011

DOI:https://doi.org/10.1103/PhysRevB.85.035206

©2012 American Physical Society

Authors & Affiliations

M. Lafrentz1, D. Brunne1, B. Kaminski1, V. V. Pavlov2, R. V. Pisarev2, A. B. Henriques3, D. R. Yakovlev1,2, G. Springholz4, G. Bauer4, and M. Bayer1

  • 1Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany
  • 2Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
  • 3Instituto de Física, Universidade de São Paulo, 05315-970 São Paulo, Brazil
  • 4Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität Linz, A-4040 Linz, Austria

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Vol. 85, Iss. 3 — 15 January 2012

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