Dynamical spin Hall conductivity in a magnetic disordered system

T. L. van den Berg, L. Raymond, and A. Verga
Phys. Rev. B 84, 245210 – Published 27 December 2011

Abstract

We investigate the intrinsic spin Hall effect in a quantum well semiconductor doped with magnetic impurities, as a means to manipulate the carriers’ spin. Using a simple Hamiltonian with Rashba spin-orbit coupling and exchange interactions, we analytically compute the spin Hall conductivity. It is demonstrated that using the appropriate order of limits, one recovers the intrinsic universal value. Numerical computations on a tight-binding model, in the weak disorder regime, confirm that the spin Hall effect is preserved in the presence of magnetic impurities. The optical spin conductivity shows large sample to sample fluctuations in the low-frequency region. As a consequence, for weak disorder, the static spin conductivity is found to follow a wide Gaussian distribution with its mean value near the intrinsic clean value.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
4 More
  • Received 13 September 2011

DOI:https://doi.org/10.1103/PhysRevB.84.245210

©2011 American Physical Society

Authors & Affiliations

T. L. van den Berg*, L. Raymond, and A. Verga

  • Aix-Marseille Université, IM2NP-CNRS UMR 6242, Campus St. Jérôme, Case 142, F-13397 Marseille, France

  • *tineke. vandenberg@im2np.fr
  • Laurent. Raymond@univ-provence.fr
  • Alberto. Verga@univ-provence.fr

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 84, Iss. 24 — 15 December 2011

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×