Defect evolution and impurity migration in Na-implanted ZnO

Pekka T. Neuvonen, Lasse Vines, Vishnukanthan Venkatachalapathy, Asier Zubiaga, Filip Tuomisto, Anders Hallén, Bengt G. Svensson, and Andrej Yu. Kuznetsov
Phys. Rev. B 84, 205202 – Published 3 November 2011

Abstract

Secondary ion mass spectrometry (SIMS) and positron annihilation spectroscopy (PAS) have been applied to study impurity migration and open volume defect evolution in Na+ implanted hydrothermally grown ZnO samples. In contrast to most other elements, the presence of Na tends to decrease the concentration of open volume defects upon annealing and for temperatures above 600C, Na exhibits trap-limited diffusion correlating with the concentration of Li. A dominating trap for the migrating Na atoms is most likely Li residing on Zn site, but a systematic analysis of the data suggests that zinc vacancies also play an important role in the trapping process.

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  • Received 10 June 2011

DOI:https://doi.org/10.1103/PhysRevB.84.205202

©2011 American Physical Society

Authors & Affiliations

Pekka T. Neuvonen1,*, Lasse Vines1, Vishnukanthan Venkatachalapathy1, Asier Zubiaga2, Filip Tuomisto2, Anders Hallén3, Bengt G. Svensson1, and Andrej Yu. Kuznetsov1

  • 1Department of Physics, Centre for Material Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo, Norway
  • 2Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto, Finland
  • 3Royal Institute of Technology, School of ICT, Dept. of Microelectronics and Applied Physics, P.O. Box Electrum 229, SE-164 40 Kista, Sweden

  • *p.t.neuvonen@smn.uio.no

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Vol. 84, Iss. 20 — 15 November 2011

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