Reduction of intrinsic critical current density under a magnetic field along the hard axis of a free layer in a magnetic tunnel junction

Katsuya Miura, Ryoko Sugano, Masahiko Ichimura, Jun Hayakawa, Shoji Ikeda, Hideo Ohno, and Sadamichi Maekawa
Phys. Rev. B 84, 174434 – Published 23 November 2011

Abstract

We investigated the effect of a magnetic field along a hard in-plane axis Hhard on a current-induced magnetization switching (CIMS) in magnetic tunnel junctions (MTJs). Since Hhard causes the effective field to tilt away from the easy axis, we evaluated the Hhard dependence of two contributing factors in CIMS [the intrinsic critical current density (Jc0) and the thermal stability factor (E/kBT)] as functions of the tilting angle (θH). Both measurements and numerical simulations showed that the presence of Hhard can reduce Jc0 by more than the amount estimated by Slonczewski's polarization function g(θ) by an order of magnitude and that E/kBT is independent of θH. These findings suggest that the effect of Hhard mainly appears in the dynamic properties due to the nonconservative force of the spin-transfer torque based on the Slonczewski's model. A simple stability analysis demonstrated that the tilt of the magnetization direction away from the easy axis caused by the presence of Hhard induces an imbalance between the spin-transfer and damping torques and that applying a current achieves the further tilted stable state. Achievement of this stable state can be interpreted as the suppression of the effect of the effective demagnetization field (Hd*). Therefore the major reduction in Jc0 is due to the suppression of Hd* caused by the presence of Hhard.

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  • Received 22 March 2011

DOI:https://doi.org/10.1103/PhysRevB.84.174434

©2011 American Physical Society

Authors & Affiliations

Katsuya Miura1,2,3,*, Ryoko Sugano1,4, Masahiko Ichimura1,4, Jun Hayakawa1, Shoji Ikeda2,3, Hideo Ohno2,3, and Sadamichi Maekawa4,5

  • 1Advanced Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan
  • 2Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • 3Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • 4JST, CREST, 5, Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan
  • 5Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, 319-1195, Japan

  • *katsuya.miura.aq@hitachi.com

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Issue

Vol. 84, Iss. 17 — 1 November 2011

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