Optical study of charge instability in CeRu2Al10 in comparison with CeOs2Al10 and CeFe2Al10

Shin-ichi Kimura, Takuya Iizuka, Hidetoshi Miyazaki, Tetsuya Hajiri, Masaharu Matsunami, Tatsuya Mori, Akinori Irizawa, Yuji Muro, Junpei Kajino, and Toshiro Takabatake
Phys. Rev. B 84, 165125 – Published 25 October 2011

Abstract

The anisotropic electronic structure responsible for the antiferromagnetic transition in CeRu2Al10 at the unusually high temperature of T0=28 K was studied using optical conductivity spectra, Ce 3d x-ray photoemission spectra, and band calculation. It was found that the electronic structure in the ac plane is that of a Kondo semiconductor, whereas that along the b axis has a nesting below 32 K (slightly higher than T0). These characteristics are the same as those of CeOs2Al10 [S. Kimura et al., Phys. Rev. Lett. 106, 056404 (2011)]. The c-f hybridization intensities between the conduction and 4f electrons of CeRu2Al10 and CeOs2Al10 are weaker than that of CeFe2Al10, showing no magnetic ordering. These results suggest that the electronic structure with one-dimensional weak c-f hybridization along the b axis combined with two-dimensional strong hybridization in the ac plane causes charge-density wave (CDW) instability, and the CDW state then induces magnetic ordering.

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  • Received 24 August 2011

DOI:https://doi.org/10.1103/PhysRevB.84.165125

©2011 American Physical Society

Authors & Affiliations

Shin-ichi Kimura1,2,*, Takuya Iizuka2, Hidetoshi Miyazaki1,†, Tetsuya Hajiri1, Masaharu Matsunami1,2, Tatsuya Mori1,‡, Akinori Irizawa3, Yuji Muro4,§, Junpei Kajino4, and Toshiro Takabatake4,5

  • 1UVSOR Facility, Institute for Molecular Science, Okazaki 444-8585, Japan
  • 2School of Physical Sciences, The Graduate University for Advanced Studies (SOKENDAI), Okazaki 444-8585, Japan
  • 3The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
  • 4Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8530, Japan
  • 5Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8530, Japan

  • *kimura@ims.ac.jp
  • Present address: Faculty of Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan.
  • Present address: Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8577, Japan.
  • §Present address: Department of Liberal Arts and Sciences, Toyama Prefectural University, Toyama 939-0398, Japan.

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Vol. 84, Iss. 16 — 15 October 2011

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