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Stacking-order dependent transport properties of trilayer graphene

S. H. Jhang, M. F. Craciun, S. Schmidmeier, S. Tokumitsu, S. Russo, M. Yamamoto, Y. Skourski, J. Wosnitza, S. Tarucha, J. Eroms, and C. Strunk
Phys. Rev. B 84, 161408(R) – Published 24 October 2011

Abstract

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of ν=2,4,6,... with a step of Δν=2, whereas the inversion-symmetric ABC trilayer exhibits plateaus at ν=6 and 10 with fourfold spin and valley degeneracy.

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  • Received 25 June 2011

DOI:https://doi.org/10.1103/PhysRevB.84.161408

©2011 American Physical Society

Authors & Affiliations

S. H. Jhang1,*, M. F. Craciun2, S. Schmidmeier1, S. Tokumitsu3, S. Russo2, M. Yamamoto3, Y. Skourski4, J. Wosnitza4, S. Tarucha3, J. Eroms1, and C. Strunk1

  • 1Institute of Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany
  • 2Centre for Graphene Science, CEMPS University of Exeter, EX4 4QF Exeter, United Kingdom
  • 3Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
  • 4Dresden High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden, Germany

  • *sungho.jhang@physik.uni-regensburg.de

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Issue

Vol. 84, Iss. 16 — 15 October 2011

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