Strain-induced spin relaxation anisotropy in symmetric (001)-oriented GaAs quantum wells

D. J. English, P. G. Lagoudakis, R. T. Harley, P. S. Eldridge, J. Hübner, and M. Oestreich
Phys. Rev. B 84, 155323 – Published 31 October 2011

Abstract

We show experimentally, using spin quantum beat spectroscopy, that strain applied to an undoped symmetric (001) GaAs/AlGaAs multiple quantum well causes an in-plane anisotropy of the spin-relaxation rate Γs, but leaves the electron Landé g factor isotropic. The spin-relaxation-rate anisotropy gives a direct measure of the bulk inversion asymmetry and the strain contributions to the conduction-band spin splitting. The comparison of the measured strain-splitting coefficient C3 for the quantum well with the value for bulk GaAs suggests a dependence on electron quantum confinement. The isotropic g factor implies a symmetric conduction electron wave function, whereas the anisotropic spin-relaxation rate requires a nonzero expectation value of the valence-band potential gradient on the conduction-band states. Therefore, the experiment suggests that strain generates an effective valence-band potential gradient, while the conduction-band potential remains symmetrical to a good approximation.

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  • Received 18 August 2011

DOI:https://doi.org/10.1103/PhysRevB.84.155323

©2011 American Physical Society

Authors & Affiliations

D. J. English, P. G. Lagoudakis, and R. T. Harley

  • School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, United Kingdom

P. S. Eldridge*, J. Hübner, and M. Oestreich

  • Institute for Solid State Physics, Leibniz University of Hannover, Appelstrasse 2, D-30167 Hannover, Germany

  • *Also at FORTH-IESL, P.O. Box 1385, 71110 Heraklion, Crete, Greece.

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Issue

Vol. 84, Iss. 15 — 15 October 2011

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